Книга "Электрические перенапряжения (EOS)" продолжает влиять на производство полупроводников, полупроводниковые компоненты и системы при масштабировании технологий от микро- до наноэлектроники. В ней излагаются основы электрических перенапряжений и способы минимизации и смягчения отказов, связанных с EOS. Текст представляет ясное представление о явлениях EOS, их происхождении, источниках, физике, механизмах отказов и дизайне EOS на чипе и системном уровне. Книга освещает вопросы происхождения EOS в производстве, интеграции сетей защиты от EOS на чипе и системном уровне, а также приводит примеры конкретных технологий, схем и чипов. Книга уникальна тем, что охватывает вопросы производства EOS от дизайна на чипе и автоматизации электронного дизайна до программного управления EOS на заводском уровне в современном мире. Внутри книги можно найти обширную информацию о следующих темах: основы электрических перенапряжений, физика EOS, временные шкалы EOS, безопасные рабочие диапазоны (SOA), физические модели явлений EOS, источники EOS в современной среде производства полупроводников и программное управление EOS, обработка и проверка EOS для предотвращения отказов, EOS отказы в полупроводниковых устройствах, схемах и системах, различие между EOS и электростатическим разрядом (ESD) (например, такими как модель человеческого тела (HBM), модель заряженного устройства (CDM), разряд кабеля (CDM), заряженная плата (CBE) до системного уровня событий тестирования IEC 61000-4-2), практики дизайна защиты от EOS на чипе и их отличия от сетей и решений защиты от ESD, вопросы системного уровня EOS на печатной плате (PCB) и оборудовании производства, примеры проблем EOS в последних цифровых, аналоговых и энергетических технологиях, включая CMOS, LDMOS и BCD, проверка правил дизайна EOS (DRC), LVS и ERC автоматизации электронного дизайна (EDA) и их отличия от ESD EDA систем, тестирование и квалификация EOS и практическая защита от ESD и системные решения для создания более надежных систем. "Электрические перенапряжения (EOS): Устройства, схемы и системы" - это продолжение серии книг автора по защите от электростатического разряда. Она является необходимым справочником и полезным исследованием проблем, с которыми сталкиваются современные технологии в эпоху наноэлектроники.
The new edition of Steven H.Voldman’s "Electrical Overstress" continues to strongly influence the semiconductor industry, its components, and systems with scaling trends going from nano-scale electronics. As Voldman explains, this book uncovers the key concepts regarding electrical overstress from a baseline, giving readers the information they need to address and minimise the effects of potential problems. He explores the interconnected nature of overstress causes, mathematical physics behind it, and strategies for its prevention. Readers will gain insight into why overstress can lead to issues, not only within individual semiconductor products, but in their on- and off-chip interaction with external systems. By doing so, his work encourages practitioners to complete designs that efficiently explore the bounds of safety while considering resource constraints and economical concerns. Authors specifically detailed coverage of how overstress occurs across different fabrication levels where the related electronic designs are completed, through to modernised aspects of program management applied at the manufacturing facility. To supplement this information, readers can access practical guidelines for mitigating overstress-related hazards, including consideration of various failure modes and models. Investigation of different scenarios presented, such as electrostatic discharge risk management tests, explains how dissimilar ESD practices differ from overstress solutions, using treats such as IEC 61204-2, to help establish repeatable results and check for potential problems before generating undesirable outcomes.Beyond the technical strivings, details represented in this book help strike a balance between the theoretical and the practical. In addition to inducing students and professionals alike to acknowledge the significance of building safety into semiconductor technology, the material genuinely stimulates the reader cognitively at all stages of dismantling. Carefully chosen examples allow this work to reflect contemporary applications within digital, analogue, and power technology while providing clarity on why and how these innovative concepts can be developed with an understanding of electron phenomenon.Throughout, Voldman keeps his chapter titles intriguing, creating dynamic impact and a lasting desire to read further. This inherent appeal can undoubtedly inspire either fundamental breakthroughs or practical improvements to innovation. "Electrical Overstress: Devices, Circuits, Devices", as the title suggests, aims to continue his legacy by offering new benchmarks and cutting-edge approaches to the fundamental and important challenges faced in the industry.
Электронная Книга «Electrical Overstress (EOS)» написана автором Steven H. Voldman в году.
Минимальный возраст читателя: 0
Язык: Английский
ISBN: 9781118703342
Описание книги от Steven H. Voldman
Electrical Overstress (EOS) continues to impact semiconductor manufacturing, semiconductor components and systems as technologies scale from micro- to nano-electronics. This bookteaches the fundamentals of electrical overstress and how to minimize and mitigate EOS failures. The text provides a clear picture of EOS phenomena, EOS origins, EOS sources, EOS physics, EOS failure mechanisms, and EOS on-chip and system design. It provides an illuminating insight into the sources of EOS in manufacturing, integration of on-chip, and system level EOS protection networks, followed by examples in specific technologies, circuits, and chips. The book is unique in covering the EOS manufacturing issues from on-chip design and electronic design automation to factory-level EOS program management in today’s modern world. Look inside for extensive coverage on: Fundamentals of electrical overstress, from EOS physics, EOS time scales, safe operating area (SOA), to physical models for EOS phenomena EOS sources in today’s semiconductor manufacturing environment, and EOS program management, handling and EOS auditing processing to avoid EOS failures EOS failures in both semiconductor devices, circuits and system Discussion of how to distinguish between EOS events, and electrostatic discharge (ESD) events (e.g. such as human body model (HBM), charged device model (CDM), cable discharge events (CDM), charged board events (CBE), to system level IEC 61000-4-2 test events) EOS protection on-chip design practices and how they differ from ESD protection networks and solutions Discussion of EOS system level concerns in printed circuit boards (PCB), and manufacturing equipment Examples of EOS issues in state-of-the-art digital, analog and power technologies including CMOS, LDMOS, and BCD EOS design rule checking (DRC), LVS, and ERC electronic design automation (EDA) and how it is distinct from ESD EDA systems EOS testing and qualification techniques, and Practical off-chip ESD protection and system level solutions to provide more robust systems Electrical Overstress (EOS): Devices, Circuits and Systems is a continuation of the author’s series of books on ESD protection. It is an essential reference and a useful insight into the issues that confront modern technology as we enter the nano-electronic era.
